S. Selberherr : rechercher sur Z-Library

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1

Three-dimensional photolithography simulation

Kirchauer, Heinrich, Selberherr, Siegfried

Journal:

Journal of Technology Computer Aided Design TCAD

Année:

1996

Langue:

english

Fichier:

PDF, 7.43 MB

english, 1996

2

Stress Evolution During Nanoindentation in Open TSVs

Papaleo, Santo, Zisser, Wolfhard H., Singulani, Anderson P., Ceric, Hajdin, Selberherr, Siegfried

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2016

Langue:

english

Fichier:

PDF, 671 KB

english, 2016

3

Temperature distribution and power dissipation in MOSFETs

A. Schütz, S. Selberherr, H.W. Pötzl

Journal:

Solid-State Electronics

Année:

1984

Langue:

english

Fichier:

PDF, 223 KB

english, 1984

4

Emerging memory technologies: Trends, challenges, and modeling methods

A. Makarov, V. Sverdlov, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 643 KB

english, 2012

5

Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices

Gehring, A., Selberherr, S.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2004

Langue:

english

Fichier:

PDF, 803 KB

english, 2004

6

A benchmark study of the Wigner Monte Carlo method

Sellier, Jean Michel, Nedjalkov, Mihail, Dimov, Ivan, Selberherr, Siegfried

Journal:

Monte Carlo Methods and Applications

Année:

2014

Langue:

english

Fichier:

PDF, 706 KB

english, 2014

7

Value Creation through Synergies of Cooperation – The Development of a New Business Model

Selberherr, Julia, Girmscheid, Gerhard

Journal:

IFAC Proceedings Volumes

Année:

2012

Langue:

english

Fichier:

PDF, 197 KB

english, 2012

8

“Silent” kidney stones in “asymptomatic” primary hyperparathyroidism—a comparison of multidetector computed tomography and ultrasound

Selberherr, Andreas, Hörmann, Marcus, Prager, Gerhard, Riss, Philipp, Scheuba, Christian, Niederle, Bruno

Journal:

Langenbeck's Archives of Surgery

Année:

2017

Langue:

english

Fichier:

PDF, 287 KB

english, 2017

9

[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Process Simulation in the Browser: Porting ViennaTS using WebAssembly

Klemenschits, Xaver, Manstetten, Paul, Filipovic, Lado, Selberherr, Siegfried

Année:

2019

Langue:

english

Fichier:

PDF, 636 KB

english, 2019

10

A temperature dependent model for the saturation velocity in semiconductor materials

R Quay, C Moglestue, V Palankovski, S Selberherr

Journal:

Materials Science in Semiconductor Processing

Année:

2000

Langue:

english

Fichier:

PDF, 212 KB

english, 2000

11

A compact model for early electromigration failures of copper dual-damascene interconnects

R.L. de Orio, H. Ceric, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 587 KB

english, 2011

12

The Economic Limit to Moore's Law [Point of View]

Rupp, K., Selberherr, S.

Journal:

Proceedings of the IEEE

Année:

2010

Langue:

english

Fichier:

PDF, 429 KB

english, 2010

13

Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation

Franz, A.F., Franz, G.A., Selberherr, S., Ringhofer, C., Markowich, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1983

Langue:

english

Fichier:

PDF, 1.14 MB

english, 1983

14

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

Quay, R., Palankovski, V., Chertouk, M., Leuther, A., Selberherr, S.

Année:

2000

Langue:

english

Fichier:

PDF, 349 KB

english, 2000

15

Simulation of Semiconductor Processes and Devices 2007 || Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

Grasser, Tibor, Selberherr, Siegfried

Année:

2007

Langue:

english

Fichier:

PDF, 231 KB

english, 2007

16

[IEEE 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO - London, UK (22-23 Nov. 1999)] 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) - S-Para S-parameter simulation of HBTs on gallium arsenide

Palankovski, V., Quay, R., Selberherr, S., Schultheis, R.

Année:

1999

Langue:

english

Fichier:

PDF, 379 KB

english, 1999

17

[IEEE Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 - Taiwan (5-8 July 2004)] Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) - Modeling of wearout, leakage, and breakdown of gate dielectrics [MOSFET]

Gehring, A., Selberherr, S.

Année:

2004

Langue:

english

Fichier:

PDF, 278 KB

english, 2004

18

Electromigration reliability of open TSV structures

Zisser, W.H., Ceric, H., Weinbub, J., Selberherr, S.

Journal:

Microelectronics Reliability

Année:

2014

Langue:

english

Fichier:

PDF, 755 KB

english, 2014

19

[IEEE 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Marina Bay Sands, Singapore (2014.6.30-2014.7.4)] Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Electromigration reliability of open TSV structures

Zisser, Wolfhard H., Ceric, Hajdin, Weinbub, Josef, Selberherr, Siegfried

Année:

2014

Langue:

english

Fichier:

PDF, 782 KB

english, 2014

20

Process and device modeling for VISI

Journal:

Microelectronics Reliability

Année:

1984

Langue:

english

Fichier:

PDF, 2.30 MB

english, 1984

21

Computer simulations of Schottky contacts with a non-constant recombination velocity

J.O. Nylander, F. Masszi, S. Selberherr, S. Berg

Journal:

Solid-State Electronics

Année:

1989

Langue:

english

Fichier:

PDF, 388 KB

english, 1989

22

On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

Predrag Habaš, Siegfried Selberherr

Journal:

Solid-State Electronics

Année:

1990

Langue:

english

Fichier:

PDF, 638 KB

english, 1990

23

Finite difference, boundary-fitted grid generation for arbitrarily shaped two-dimensional simulation areas

Claus Fischer, Gerd Nanz, Siegfried Selberherr

Journal:

Computer Methods in Applied Mechanics and Engineering

Année:

1993

Langue:

english

Fichier:

PDF, 646 KB

english, 1993

24

Numerical analysis of acoustic wave generation in anisotropic piezoelectric materials

Erasmus Langer, Siegfried Selberherr, Peter A. Markowich, Christian A. Ringhofer

Journal:

Sensors and Actuators

Année:

1983

Langue:

english

Fichier:

PDF, 489 KB

english, 1983

25

Rigorous modeling of high-speed semiconductor devices

Vassil Palankovski, Siegfried Selberherr

Journal:

Microelectronics Reliability

Année:

2004

Langue:

english

Fichier:

PDF, 634 KB

english, 2004

26

Comparison of deposition models for a TEOS LPCVD process

Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 238 KB

english, 2007

27

VSP – A gate stack analyzer

M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Goes, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 176 KB

english, 2007

28

Direct extraction feature for scattering parameters of SiGe-HBTs

S Wagner, V Palankovski, G Röhrer, T Grasser, S Selberherr

Journal:

Applied Surface Science

Année:

2004

Langue:

english

Fichier:

PDF, 134 KB

english, 2004

29

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr

Journal:

Microelectronics Journal

Année:

2004

Langue:

english

Fichier:

PDF, 187 KB

english, 2004

30

Modeling current transport in ultra-scaled field-effect transistors

V. Sverdlov, H. Kosina, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 268 KB

english, 2007

31

Electromigration in submicron interconnect features of integrated circuits

H. Ceric, S. Selberherr

Journal:

Materials Science and Engineering: R: Reports

Année:

2011

Langue:

english

Fichier:

PDF, 2.21 MB

english, 2011

32

Volume inversion mobility in SOI MOSFETs for different thin body orientations

V. Sverdlov, E. Ungersboeck, H. Kosina, S. Selberherr

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 219 KB

english, 2007

33

A study of ion implantation into crystalline germanium

R. Wittmann, S. Selberherr

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 595 KB

english, 2007

34

Simulative prediction of the resistance change due to electromigration induced void evolution

Hajdin Ceric, Siegfried Selberherr

Journal:

Microelectronics Reliability

Année:

2002

Fichier:

PDF, 758 KB

2002

35

Improving SiC lateral DMOSFET reliability under high field stress

T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2003

Fichier:

PDF, 939 KB

2003

36

Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure

Martin Knaipp, Werner Kanert, Siegfried Selberherr

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 340 KB

english, 2000

37

Design optimization of multi-barrier tunneling devices using the transfer-matrix method

A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 230 KB

english, 2002

38

An energy relaxation time model for device simulation

B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 141 KB

english, 1999

39

Three-dimensional simulation of sacrificial etching

Johann Cervenka, Hajdin Ceric, Siegfried Selberherr

Journal:

Microsystem Technologies

Année:

2008

Langue:

english

Fichier:

PDF, 362 KB

english, 2008

40

Micro materials modeling in MINIMOS-NT

V. Palankovski, S. Selberherr

Journal:

Microsystem Technologies

Année:

2001

Langue:

english

Fichier:

PDF, 113 KB

english, 2001

41

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Neophytos Neophytou, Martin Wagner, Hans Kosina, Siegfried Selberherr

Journal:

Journal of Electronic Materials

Année:

2010

Langue:

english

Fichier:

PDF, 534 KB

english, 2010

42

Physically based models of electromigration: From Black’s equation to modern TCAD models

R.L. de Orio, H. Ceric, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 916 KB

english, 2010

43

Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

A. Gehring, F. Jiménez-Molinos, H. Kosina, A. Palma, F. Gámiz, S. Selberherr

Journal:

Microelectronics Reliability

Année:

2003

Fichier:

PDF, 1.05 MB

2003

44

Theory of the Monte Carlo method for semiconductor device simulation

Kosina, H., Nedjalkov, M., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Année:

2000

Langue:

english

Fichier:

PDF, 510 KB

english, 2000

45

Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

Simlinger, T., Brech, H., Grave, T., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1997

Langue:

english

Fichier:

PDF, 259 KB

english, 1997

46

Optimization of pseudomorphic HEMT's supported by numerical simulations

Brech, H., Grave, T., Simlinger, T., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1997

Langue:

english

Fichier:

PDF, 205 KB

english, 1997

47

Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling

Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.

Journal:

IEEE Transactions on Magnetics

Année:

2012

Langue:

english

Fichier:

PDF, 727 KB

english, 2012

48

[IEEE 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2002 - Manchester, UK (18-19 Nov. 2002)] The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications - Small-signal analysis and direct S-parameter extraction

Wagner, S., Palankovski, V., Grasser, T., Schultheis, R., Selberherr, S.

Année:

2002

Langue:

english

Fichier:

PDF, 285 KB

english, 2002

49

[IEEE 27th International Spring Seminar on Electronics Technology - Bankya, Bulgaria (13-16 May 2004)] 27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. - Numerical simulation of selected semiconductor devices

Palankovski, V., Selberherr, S.

Année:

2005

Langue:

english

Fichier:

PDF, 607 KB

english, 2005

50

Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule

Ringhofer, C., Kosina, H., Nedjalkov, M., Selberherr, S.

Journal:

SIAM Journal on Applied Mathematics

Année:

2004

Langue:

english

Fichier:

PDF, 1.65 MB

english, 2004